Electrolyte and process for electroplating copper onto a barrier layer
US10472726B2 · kind B2 · utility
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25Claims
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Key dates
| Filing date | Aug 28, 2013 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Sep 14, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D7/123
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The subject of the present invention is an electrolyte composition for depositing copper on semiconductor substrates covered with a barrier layer.This electrolyte contains the combination of imidazole and 2,2′-bipyridine, used as suppressor, and of thiodiglycolic acid, used as accelerator.The combination of these additives makes it possible to obtain a bottom-up filling on trenches of very small width, typically of less than 100 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.