Silicon single crystal manufacturing method
US10472733B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2016 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Feb 10, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon single crystal manufacturing method in which the distance between the heat shield and the melt level of the melt can be regulated in a high precision. The real image includes at least the circular opening of the heat shield provided in such a way that the heat shield covers a part of the melt level of the silicon melt. The mirror image is a reflected image of the heat shield on the surface of the silicon melt. Based on the distance between the obtained real image and the mirror image, the melt level position of the silicon melt is computed, and the distance between the heat shield and the melt level position is regulated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.