Patent assignee · JP · COMPANY

SUMCO CORPORATION

595Patents
544Active
595Granted
61Portfolio score

Filing activity: Jul 12, 2001 → Feb 16, 2024 · 196 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US7833348B2 Temperature control method of epitaxial growth apparatus Chemistry; Metallurgy 403 Active
US8063466B2 Semiconductor substrate for solid-state image sensing device as well as solid-state image sensing device and method for producing the same Emerging Cross-Sectional Technologies 96 Active
US7491342B2 Bonded semiconductor substrate manufacturing method thereof Electricity 31 Expired
US7781309B2 Method for manufacturing direct bonded SOI wafer and direct bonded SOI wafer manufactured by the method Electricity 25 Active
US7718509B2 Method for producing bonded wafer Electricity 24 Active
US7943497B2 Method for manufacturing an SOI substrate Emerging Cross-Sectional Technologies 22 Active
US7354844B2 Method for manufacturing SOI substrate Electricity 21 Active
US7713842B2 Method for producing bonded wafer Electricity 20 Active
US7331780B2 Heat treatment jig for semiconductor wafer Electricity 18 Expired
US7811907B2 Method for manufacturing semiconductor device and epitaxial growth equipment Electricity 14 Active
US7700394B2 Method for manufacturing silicon wafer method Electricity 12 Expired
US7712290B2 Container packaging apparatus Performing Operations; Transporting 11 Active
US7320731B2 Process for growing silicon single crystal and process for producing silicon wafer Chemistry; Metallurgy 11 Active
US7642178B2 Semiconductor device, method for manufacturing the same and method for evaluating the same Electricity 10 Active
US9017483B2 Susceptor for vapor phase epitaxial growth device Chemistry; Metallurgy 10 Active
US7763541B2 Process for regenerating layer transferred wafer Electricity 10 Active
US7442623B2 Method for manufacturing bonded substrate and bonded substrate manufactured by the method Electricity 10 Active
US9133063B2 Composite crucible, method of manufacturing the same, and method of manufacturing silicon crystal Emerging Cross-Sectional Technologies 8 Active
US7960254B2 Manufacturing method for epitaxial wafer Electricity 8 Active
US7736998B2 Silicon-on insulator substrate and method for manufacturing the same Emerging Cross-Sectional Technologies 8 Active
US7316745B2 High-resistance silicon wafer and process for producing the same Emerging Cross-Sectional Technologies 8 Expired
US8110486B2 Method of manufacturing semiconductor wafer by forming a strain relaxation SiGe layer on an insulating layer of SOI wafer Electricity 8 Active
US7290382B2 Container packaging apparatus Performing Operations; Transporting 8 Active
US7719260B2 Method for pre-treating epitaxial layer, method for evaluating epitaxial layer, and apparatus for evaluating epitaxial layer Electricity 8 Active
US7405142B2 Semiconductor substrate and field-effect transistor, and manufacturing method for same Electricity 7 Expired

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.