Epitaxial wafer and method for manufacturing same
US10472736B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Mar 23, 2018 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Mar 23, 2038 |
Classification
- Technology area (CPC —)General
Abstract
An epitaxial wafer includes a silicon carbide film having a first main surface. A groove portion is formed in the first main surface. The groove portion extends in one direction along the first main surface. Moreover, a width of the groove portion in the one direction is twice or more as large as a width of the groove portion in a direction perpendicular to the one direction. Moreover, a maximum depth of the groove portion from the first main surface is not more than 10 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.