Hideyuki Doi
11Patents
2h-index
14Co-inventors
51Inventor score
Filing activity: May 20, 1997 → Mar 23, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6001744A | Method of cleaning a surface of a compound semiconductor crystal of group II-VI elements of periodic table | Electricity | 16 | Expired |
| US6103359A | Process and apparatus for manufacturing an anisotropic conductor sheet and a magnetic mold piece for the same | Emerging Cross-Sectional Technologies | 8 | Expired |
| US9057147B2 | Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrate | Emerging Cross-Sectional Technologies | 1 | Active |
| US9957641B2 | Epitaxial wafer and method for manufacturing same | Electricity | 1 | Active |
| US10612160B2 | Epitaxial wafer and method for manufacturing same | Electricity | 1 | Active |
| US10697086B2 | Method for manufacturing silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and apparatus for manufacturing silicon carbide epitaxial substrate | Electricity | 1 | Active |
| US7852896B2 | Vertical cavity surface emitting laser | Electricity | 1 | Active |
| US9325024B2 | Gas decomposition component, method for producing gas decomposition component, and power generation apparatus | Emerging Cross-Sectional Technologies | 0 | Active |
| US9455464B2 | Power generation apparatus | Emerging Cross-Sectional Technologies | 0 | Active |
| US9132384B2 | Gas decomposition component, power generation apparatus, and method for decomposing gas | Emerging Cross-Sectional Technologies | 0 | Active |
| US10472736B2 | Epitaxial wafer and method for manufacturing same | General | 0 | Revoked |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.