Patent · US Active

Fully integrated avalanche photodiode receiver

US10473853B2 · kind B2 · utility

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19Claims

0Family size

Assignee

SiFotonics Technologies Co., Ltd. · KY

Inventors

Mengyuan Huang · Cupertino, US
Tzung-I Su · Yuanchang, TW
Su Li · Beijing, CN
Naichuan Zhang · Beijing, CN
Pengfei Cai · Beijing, CN
Wang Chen · Beijing, CN
Ching-yin Hong · Lexington, US
Dong Pan · Taipei, TW

Key dates

Filing date	Dec 21, 2017
Grant date	Nov 12, 2019
Priority date	—
Expiry date	Dec 21, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/68
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Various embodiments of a fully integrated avalanche photodiode receiver and manufacturing method thereof are described herein. A photonic device includes a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, an avalanche photodiode integrated with the SOI substrate, a capacitor integrated with the SOI substrate, a resistor integrated with the SOI substrate, and silicon passive waveguides as well as bonding pads integrated with the SOI substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.