Patent · US Active

Systems and methods for device-correlated overlay metrology

US10474040B2 · kind B2 · utility

3Cited by
6References
36Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 15, 2018
Grant dateNov 12, 2019
Priority date
Expiry dateJun 15, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/12
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

An overlay metrology system may measure a first-layer pattern placement distance between a pattern of device features and a pattern of reference features on a first layer of an overlay target on a sample. The system may further measure, subsequent to fabricating a second layer including at least the pattern of device features and the pattern of reference features, a second-layer pattern placement distance between the pattern of device features and the pattern of reference features on the second layer. The system may further measure a reference overlay based on relative positions of the pattern of reference features on the first layer and the second layer. The system may further determine a device-relevant overlay for the pattern of device-scale features by adjusting the reference overlay with a difference between the first-layer pattern placement distance and the second-layer pattern placement distance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.