Systems and methods for device-correlated overlay metrology
US10474040B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2018 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Jun 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An overlay metrology system may measure a first-layer pattern placement distance between a pattern of device features and a pattern of reference features on a first layer of an overlay target on a sample. The system may further measure, subsequent to fabricating a second layer including at least the pattern of device features and the pattern of reference features, a second-layer pattern placement distance between the pattern of device features and the pattern of reference features on the second layer. The system may further measure a reference overlay based on relative positions of the pattern of reference features on the first layer and the second layer. The system may further determine a device-relevant overlay for the pattern of device-scale features by adjusting the reference overlay with a difference between the first-layer pattern placement distance and the second-layer pattern placement distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.