Semiconductor substrate and manufacturing method thereof
US10475637B2 · kind B2 · utility
3Cited by
3References
4Claims
0Family size
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Key dates
| Filing date | May 4, 2017 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | May 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/53
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate has an epitaxy region located at a central portion of a main plane of the semiconductor substrate, a periphery region surrounding the epitaxy region and an injured region distributed inside the periphery region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.