Patent assignee · TW · COMPANY

Globalwafers Co., Ltd.

293Patents
293Active
293Granted
64Portfolio score

Filing activity: Dec 27, 2013 → Jun 11, 2024

Most-cited patents

PatentTitleAreaCited byStatus
US10468294B2 High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed on a substrate with a rough surface Electricity 6 Active
US10361097B2 Apparatus for stressing semiconductor substrates Electricity 5 Active
US11111597B2 Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method Electricity 4 Active
US11145538B2 High resistivity silicon-on-insulator structure and method of manufacture thereof Electricity 4 Active
US10745823B2 Systems and methods for production of low oxygen content silicon Chemistry; Metallurgy 4 Active
US10475637B2 Semiconductor substrate and manufacturing method thereof Electricity 3 Active
US11142844B2 High resistivity single crystal silicon ingot and wafer having improved mechanical strength Electricity 3 Active
US11767610B2 Use of buffer members during growth of single crystal silicon ingots Chemistry; Metallurgy 3 Active
US10487418B2 Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth process Chemistry; Metallurgy 3 Active
US10907251B2 Liner assemblies for substrate processing systems Electricity 3 Active
US10344380B2 Liner assemblies for substrate processing systems Electricity 3 Active
US10145011B2 Substrate processing systems having multiple gas flow controllers Electricity 3 Active
US11326271B2 Methods for forming a unitized crucible assembly Chemistry; Metallurgy 3 Active
US11795569B2 Systems for producing a single crystal silicon ingot using a vaporized dopant Emerging Cross-Sectional Technologies 3 Active
US10312134B2 High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss Electricity 3 Active
US10679908B2 Cleave systems, mountable cleave monitoring systems, and methods for separating bonded wafer structures Performing Operations; Transporting 3 Active
US11136691B2 Systems and methods for production of low oxygen content silicon Chemistry; Metallurgy 3 Active
US10283402B2 Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress Electricity 2 Active
US11982019B2 Crystal growth doping apparatus and crystal growth doping method Emerging Cross-Sectional Technologies 2 Active
US11515196B1 Methods for etching a semiconductor structure and for conditioning a processing reactor Electricity 2 Active
US10211297B2 Semiconductor heterostructures and methods for forming same Electricity 2 Active
US10315337B2 Methods and system for controlling a surface profile of a wafer Physics 2 Active
US10943813B2 Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability Electricity 2 Active
US11345996B2 Liner assemblies for substrate processing systems Electricity 2 Active
US10468295B2 High resistivity silicon-on-insulator structure and method of manufacture thereof Electricity 2 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.