Method of manufacturing element chip and element chip
US10475704B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2017 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Apr 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/5446
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a plasma processing step that is used in the method of manufacturing the element chip for manufacturing a plurality of element chips by dividing a substrate having a plurality of element regions, the substrate is divided into element chips 10 by exposing the substrate to a first plasma. Therefore, element chips having a first surface, a second surface, and a side surface connecting the first surface and the second surface are held spaced from each other on a carrier. A protection film covering the element chip is formed only on the side surface and it is possible to suppress creep-up of a conductive material to the side surface in the mounting step by exposing the element chips to second plasma in which a mixed gas of fluorocarbon and helium is used as a raw material gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.