Semiconductor device and method for fabricating the same
US10475709B1 · kind B1 · utility
12Cited by
2References
10Claims
0Family size
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Key dates
| Filing date | Jul 10, 2018 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Jul 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; removing part of the first fin-shaped structure to forma first trench; forming a dielectric layer in the first trench, wherein the dielectric layer comprises silicon oxycarbonitride (SiOCN); and planarizing the dielectric layer to form a first single diffusion break (SDB) structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.