Patent · US Active

IGBT heat dissipation structure

US10475723B1 · kind B1 · utility

4Cited by

0References

10Claims

0Family size

Assignee

AMULAIRE THERMAL TECHNOLOGY, INC. · TW

Inventors

TZE-YANG YEH · New Taipei, TW
Chun-Lung Wu · Taichung, TW

Key dates

Filing date	Nov 6, 2018
Grant date	Nov 12, 2019
Priority date	—
Expiry date	Nov 6, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D12/441
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An IGBT heat dissipation structure includes a layer of IGBT chips, a bonding layer, a cold spray layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on top of the heat dissipation layer. The cold spray layer is disposed on top of the thermal spray layer. The bonding layer is disposed on top of the cold spray layer, and the layer of IGBT chips is disposed on top of the bonding layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.