Ferroelectric memory device and cross-point array apparatus including the same
US10475801B2 · kind B2 · utility
21Cited by
3References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 3, 2018 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Jan 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory device includes a first electrode layer disposed on a substrate, a first tunnel barrier layer disposed on the first electrode layer, a second electrode layer disposed on the first tunnel barrier layer, a second tunnel barrier layer disposed on the second electrode layer, and a third electrode layer disposed on the second tunnel barrier layer. Any one of the first and second tunnel barrier layers includes a ferroelectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.