Semiconductor device and method for manufacturing the same
US10475895B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2017 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Jun 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a first dielectric layer, a first device and a second device. The first dielectric layer is disposed on the substrate. The first device is disposed on the first dielectric layer on a first region of the substrate, and includes two first spacers, a second dielectric layer and a first gate structure. The first spacers are separated to form a first trench. The second dielectric layer is disposed on side surfaces and a bottom surface of the first trench. The first gate structure is disposed on the second dielectric layer. The second device is disposed on a second region of the substrate, and includes two second spacers and a second gate structure. The second spacers are disposed on the first dielectric layer and are separated to form a second trench. The second gate structure is disposed on the substrate within the second trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.