Inventor · Taipei, TW

Hsin-Che Chiang

56Patents
3h-index
34Co-inventors
66Inventor score

Filing activity: Nov 25, 2003 → Mar 13, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US10128156B1 FinFET device with reduced parasitic capacitance and method for fabricating the same Electricity 5 Active
US9859273B2 Semiconductor structure and manufacturing process thereof Electricity 5 Active
US10741558B2 Nanosheet CMOS device and method of forming Electricity 5 Active
US10854506B2 Semiconductor device and manufacturing method thereof Electricity 2 Active
US7048603B2 Method for manufacturing organic light-emitting diodes Electricity 2 Expired
US10134873B2 Semiconductor device gate structure and method of fabricating thereof Electricity 2 Active
US11282705B2 Semiconductor device and method of forming the same Electricity 2 Active
US10529629B2 Methods of forming metal gates Electricity 2 Active
US10991805B2 Semiconductor device and method of manufacture Electricity 1 Active
US10714342B2 Semiconductor device and method of forming the same Electricity 1 Active
US8255449B2 High-speed continuous-time fir filter Electricity 1 Active
US10475895B2 Semiconductor device and method for manufacturing the same Electricity 1 Active
US10403737B2 Method of forming a gate structure of a semiconductor device Electricity 1 Active
US11315785B2 Epitaxial blocking layer for multi-gate devices and fabrication methods thereof Electricity 1 Active
US10879393B2 Methods of fabricating semiconductor devices having gate structure with bent sidewalls Electricity 1 Active
US12183810B2 Semiconductor devices and methods of manufacture Electricity 0 Active
US11145730B2 Semiconductor device and method for manufacturing the same Electricity 0 Active
US11282942B2 Semiconductor device structure with uniform threshold voltage distribution and method of forming the same Electricity 0 Active
US8533252B2 Broad-band active delay line Electricity 0 Active
US11101385B2 Fin field effect transistor (FinFET) device structure with air gap and method for forming the same Electricity 0 Active
US11521971B2 Gate dielectric having a non-uniform thickness profile Electricity 0 Active
US12027415B2 Semiconductor device structures Electricity 0 Active
US12336272B2 Semiconductor device structure and methods of forming the same Electricity 0 Active
US11799017B2 Semiconductor device structure with uniform threshold voltage distribution and method of forming the same Electricity 0 Active
US12376326B2 Gate resistance improvement and method thereof Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.