Complementary metal oxide semiconductor device and method of forming the same
US10475925B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | May 21, 2018 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | May 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a complementary metal oxide semiconductor device is disclosed. First, a substrate having a first device region and a second device region is provided. A first trench is formed in the first device region and filled with a first material. A second trench is formed in the second device region and filled with a second material. The first material and the second material comprise different stresses. After that, a first gate structure and a second gate structure are formed on the first material and the second material and completely covering the first trench and the second trench, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.