Optoelectronic device
US10475956B2 · kind B2 · utility
27Cited by
82References
30Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 21, 2015 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Dec 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8312
Abstract
An optoelectronic device comprising a semiconductor structure includes a p-type active region and an n-type active region. The semiconductor structure is comprised solely of one or more superlattices, where each superlattice is comprised of a plurality of unit cells. Each unit cell comprises at least two distinct substantially single crystal layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.