Petar Atanackovic
109Patents
17h-index
17Co-inventors
83Inventor score
Filing activity: Jun 29, 2000 → Sep 23, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7217636B1 | Semiconductor-on-insulator silicon wafer | Electricity | 270 | Expired |
| US7821066B2 | Multilayered BOX in FDSOI MOSFETS | Electricity | 108 | Active |
| US10069036B2 | Resonant optical cavity light emitting device | Electricity | 69 | Active |
| US7135699B1 | Method and apparatus for growth of single-crystal rare-earth oxides, nitrides, and phosphides | Electricity | 50 | Expired |
| US6734453B2 | Devices with optical gain in silicon | Electricity | 50 | Expired |
| US9412911B2 | Optical tuning of light emitting semiconductor junctions | Electricity | 37 | Active |
| US7807917B2 | Thermoelectric and pyroelectric energy conversion devices | Electricity | 29 | Active |
| US10475956B2 | Optoelectronic device | Electricity | 27 | Active |
| US7351993B2 | Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon | Electricity | 25 | Expired |
| US8106381B2 | Semiconductor structures with rare-earths | Electricity | 24 | Active |
| US9691938B2 | Advanced electronic device structures using semiconductor structures and superlattices | Electricity | 23 | Active |
| US7384481B2 | Method of forming a rare-earth dielectric layer | Electricity | 22 | Expired |
| US10622514B1 | Resonant optical cavity light emitting device | Electricity | 22 | Active |
| US11502223B1 | Epitaxial oxide materials, structures, and devices | Electricity | 21 | Active |
| US10418517B2 | Resonant optical cavity light emitting device | Electricity | 20 | Active |
| US7037806B1 | Method of fabricating silicon-on-insulator semiconductor substrate using rare earth oxide or rare earth nitride | Electricity | 19 | Expired |
| US6858864B2 | Devices with optical gain in silicon | Electricity | 18 | Expired |
| US7023011B2 | Devices with optical gain in silicon | Electricity | 15 | Expired |
| US7273657B2 | Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon | Electricity | 15 | Expired |
| US11522103B1 | Epitaxial oxide materials, structures, and devices | Electricity | 14 | Active |
| US6597011B1 | Dual non-parallel electronic field electro-optic effect device | Electricity | 14 | Expired |
| US11456361B1 | Ultrawide bandgap semiconductor devices including magnesium germanium oxides | Electricity | 13 | Active |
| US11621329B1 | Epitaxial oxide materials, structures, and devices | Electricity | 12 | Active |
| US7253080B1 | Silicon-on-insulator semiconductor wafer | Electricity | 12 | Expired |
| US11462400B1 | Ultrawide bandgap semiconductor devices including magnesium germanium oxides | Electricity | 12 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.