Method for producing a nitride semiconductor component, and a nitride semiconductor component

US10475959B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Tobias Gotschke · Berlin, DE
• Bastian Galler · Regensburg, DE
• Juergen Off · Regensburg, DE
• Werner Bergbauer · Windberg, DE
• Thomas Lehnhardt · Regensburg, DE

Key dates

• Filing date: Jun 15, 2016
• Grant date: Nov 12, 2019
• Expiry date: Jun 15, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/815

Abstract

The invention relates to a method for producing a nitride semiconductor component (100), comprising the steps of: —providing a growth substrate (1) having a growth surface (10) formed from a planar area (11) with a plurality of three-dimensionally shaped surface structures (12) on said planar area (11), —growing a nitride-based semiconductor layer sequence (30) on the growth surface (10), growth beginning selectively on a growth area (13) of said growth substrate, and the growth area (13) being less than 45% of the growth surface (10). The invention also relates to a nitride semiconductor component (100) which can be produced according to said method.