Optoelectronic semiconductor chip and method for manufacturing an optoelectronic semiconductor chip
US10475965B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 23, 2017 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Jan 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K65/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optoelectronic semiconductor chip and a method for manufacturing an optoelectronic semiconductor chip are disclosed. In an embodiment the semiconductor chip includes a semiconductor body having a main surface and at least one side surface arranged transversely to the main surface, a contact layer arranged on the main surface of the semiconductor body and containing an electrically conductive material, a filter layer arranged on the contact layer and containing a dielectric material and a conductive layer arranged on the filter layer and containing an electrically conductive material, wherein a thickness of the conductive layer is greater than a thickness of the contact layer, wherein the contact layer and the conductive layer comprise a transparent electrically conductive oxide, and wherein the filter layer is multi-layered and comprises at least two sublayers which differ in their refractive index.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.