Patent · US Active

Magnetic memory device

US10482941B2 · kind B2 · utility

2Cited by
3References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 12, 2018
Grant dateNov 19, 2019
Priority date
Expiry dateSep 12, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01F10/329
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.