Method for cleaning, passivation and functionalization of Si—Ge semiconductor surfaces
US10483097B2 · kind B2 · utility
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Key dates
| Filing date | Sep 6, 2017 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Jan 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for in-situ dry cleaning of a SiGe semiconductor surface, ex-situ degreases the Ge containing semiconductor surface and removes organic contaminants. The surface is then dosed with HF (aq) or NH4F (g) generated via NH3+NH or NF3 with H2 or H2O to remove oxygen containing contaminants. In-situ dosing of the SiGe surface with atomic H removes carbon containing contaminants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.