Method for manufacturing a semiconductor material including a semi-polar III-nitride layer
US10483103B2 · kind B2 · utility
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23Claims
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Key dates
| Filing date | May 20, 2015 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | May 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for manufacturing a semiconductor material including a semi-polar III-nitride layer from a semi-polar starting substrate including a plurality of grooves periodically spaced apart, each groove including a first inclined flank of crystallographic orientation C (0001) and a second inclined flank of different crystallographic orientation, the method comprising the phases consisting in:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.