Florian Tendille
2Patents
0h-index
6Co-inventors
27Inventor score
Filing activity: May 20, 2015 → Dec 18, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10483103B2 | Method for manufacturing a semiconductor material including a semi-polar III-nitride layer | Electricity | 0 | Active |
| US11990335B2 | N-CO-doped semiconductor substrate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.