Semiconductor device
US10483124B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2018 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Sep 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes: a first stack above a substrate and including insulation layers and conductive layers alternately stacked in a first direction, the first stack including a staircase-shaped portion in an end portion of the first stack in a second direction parallel to a main face of the substrate, the staircase-shaped portion including steps and terraces corresponding to the conductive layers, at least a part of the steps having arc shape curved along a third direction crossing the second direction; and a second stack above the substrate and including first and second layers stacked in the first direction. In the second and/or third direction, a dimension of the first stack is larger than a dimension of the second stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.