Patent · US Active

Epitaxially coated semiconductor wafer, and method for producing an epitaxially coated semiconductor wafer

US10483128B2 · kind B2 · utility

1Cited by

1References

5Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Timo Mueller · Burghausen, DE
Michael Gehmlich · Bad Birnbach, DE
Frank Faller · Vilshofen an der Donau, DE

Key dates

Filing date	Oct 29, 2015
Grant date	Nov 19, 2019
Priority date	—
Expiry date	Oct 29, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/83
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Epitaxial wafers with a high concentration of BMD nuclei or developed BMDs just below a denuded zone, and having low surface roughness, are produced by forming an oxynitride layer on a purposefully oxidized epitaxial layer by a short RTA treatment in a nitriding atmosphere, removing the oxynitride layer, and then polishing the epitaxial surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.