Etching method
US10483135B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 8, 2018 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Mar 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/768
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method for a target object. The target object includes a main surface, grooves formed in the main surface, and an etching target film covering the main surface and surfaces of the grooves. The method includes supplying a first gas into a processing chamber, and supplying a second gas and a high frequency power to generate a plasma of a gas including the second gas in the processing chamber. The first gas contains an oxidizing agent that does not include a hydrogen atom. The second gas contains a compound that includes one or more silicon atoms and one or more fluorine atoms and does not include a hydrogen atom. The etching target film is made of a material that is dry etched by using fluorine, and portions of the etching target film covering the surfaces of the grooves are selectively removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.