Image sensor
US10483304B2 · kind B2 · utility
1Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2017 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Feb 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a light-sensing element that generates charge in response to incident light, a storage diode formed in a substrate, wherein the storage diode stores the charge generated by the light-sensing element, a floating diffusion region formed in a top surface of the substrate and spaced apart from the storage diode, and a transfer gate at least partially buried under the top surface of the substrate, wherein the transfer gate controls the transfer of the charge from the storage diode to the floating diffusion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.