Inventor · Seoul, KR

Tae-Yon Lee

49Patents
6h-index
73Co-inventors
72Inventor score

Filing activity: May 1, 2002 → Nov 5, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US7233054B1 Phase change material and non-volatile memory device using the same Electricity 22 Expired
US10204964B1 Image sensor and method of fabricating thereof Emerging Cross-Sectional Technologies 19 Active
US8149608B2 Multi-level phase change random access memory device Physics 15 Active
US9350930B2 Unit pixel of stacked image sensor and stacked image sensor including the same Electricity 7 Active
US10557925B2 Time-of-flight (TOF) image sensor using amplitude modulation for range measurement Physics 7 Active
US9225922B2 Image-sensing devices and methods of operating the same Electricity 7 Active
US9761636B2 Image sensors including semiconductor channel patterns Electricity 6 Active
US7807989B2 Phase-change memory using single element semimetallic layer Electricity 5 Active
US9385166B2 Image sensor and image processing device Electricity 4 Active
US9762890B2 Distance sensor and image processing system including the same Physics 4 Active
US9232163B2 Depth pixel of three-dimensional image sensor and three-dimensional image sensor including the same Physics 3 Active
US11476287B2 Image sensor with light blocking layer Electricity 3 Active
US9893123B2 Image sensor including photoelectric conversion devices Emerging Cross-Sectional Technologies 3 Active
US10522581B2 Image sensor and an image processing device including the same Electricity 2 Active
US11177322B2 Image sensor and method of fabricating thereof Emerging Cross-Sectional Technologies 2 Active
US9046358B2 Sensor, method of operating the same, and system including the same Electricity 2 Active
US10615228B2 Image sensor Electricity 2 Active
US10355051B2 Semiconductor device Electricity 2 Active
US8017929B2 Phase change material layers and phase change memory devices including the same Electricity 2 Active
US10529755B2 Image sensor having a photoelectric conversion layer coupled to a storage node through a pinning layer with P-type impurities Electricity 2 Active
US10497754B2 Image sensor and method of fabricating thereof Emerging Cross-Sectional Technologies 2 Active
US10483304B2 Image sensor Electricity 1 Active
US10797092B2 Image sensor having an interconnection layer connecting to stacked transparent electrodes and covering a black pixel region Electricity 1 Active
US9894301B2 CMOS image sensors with photogate structures and sensing transistors, operation methods thereof, and image processing systems including the same Electricity 1 Active
US10916587B2 Image sensor Emerging Cross-Sectional Technologies 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.