Silicon carbide semiconductor device
US10483389B2 · kind B2 · utility
3Cited by
6References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2015 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Dec 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A silicon carbide (SiC) semiconductor device having a metal oxide semiconductor field effect transistor (MOSFET) and integrated with an anti-parallelly connected Schottky diode includes: an n-type substrate, an n-type drift layer, a plurality of doped regions, a gate dielectric layer, a gate electrode, an inter-layer dielectric layer, a plurality of source openings, a plurality of junction openings, a plurality of gate openings, a first metal layer and a second metal layer. The second metal layer at the junction openings forms the Schottky diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.