Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array
US10483457B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2018 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Aug 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/101
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Aspects of the disclosure provide magnetoresistive random access memory (MRAM) and methods. The MRAM generally includes a first magnetic tunnel junction (MTJ) storage element comprising a first fixed layer, a first insulating layer, and a first free layer, and a second MTJ storage element comprising a second fixed layer, a second insulating layer, and a second free layer. The MRAM further includes a conductive layer connected to a source line, first bit line, and a second bit line, wherein the first MTJ storage element is disposed above and connected to the conductive layer and the first bit line at a first end and connected to the first bit line at a second end, and wherein the second MTJ storage element is disposed above and connected to the conductive layer and the second bit line at a first end and connected to the second bit line at a second end.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.