Patent · US Active

Resistive switching memory device

US10483464B1 · kind B1 · utility

1Cited by
8References
21Claims
0Family size

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Key dates

Filing dateMay 31, 2018
Grant dateNov 19, 2019
Priority date
Expiry dateMay 31, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N70/881

Abstract

Provided herein are resistive switching devices comprising a nanocomposite, an inert electrode and an active electrode. Also provided are methods for preparing and using the disclosed resistive switching devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.