Via and skip via structures

US10485111B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Shao Beng Law · Watervliet, US
• Nicholas V. LiCausi · Watervliet, US
• Errol Todd Ryan · Wappingers Falls, US
• James Jay McMahon · Clifton Park, US
• Ryan Smith · San Clemente, US
• Xunyuan Zhang · Albany, US

Key dates

• Filing date: Jul 12, 2017
• Grant date: Nov 19, 2019
• Expiry date: Jul 27, 2037

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49165
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to via and skip via structures and methods of manufacture. The method includes: forming a first metallization layer with a first capping layer over the first metallization layer; forming a second metallization layer with a second capping layer over the second metallization layer; forming a partial skip via structure to the first metallization layer by removing a portion of the first capping layer and the second capping and depositing conductive material in an opening formed in the second metallization layer; forming a third capping layer over the filled partial skip via and the second capping layer; and forming a remaining portion of a skip via structure in alignment with the partial skip via structure by opening the third capping layer to expose the conductive material of the partial skip via.