Room-temperature-bonded semiconductor device and manufacturing method of room-temperature-bonded semiconductor device
US10486263B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Oct 7, 2015 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Oct 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15787
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device formed by performing bonding at room temperature with respect to a wafer in which bonded electrodes and insulating layers and are respectively exposed to front surfaces, including a bonding interlayer which independently exhibits non-conductivity and exhibits conductivity by being bonded to the bonded electrodes, between the front surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.