Self-protective layer formed on high-K dielectric layer
US10490410B2 · kind B2 · utility
2Cited by
5References
20Claims
0Family size
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Key dates
| Filing date | Dec 28, 2018 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Dec 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28079
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device structures having metal gate structures with tunable work function values are provided. In one example, a first gate structure and a second gate structure formed on a substrate, wherein the first gate structure includes a first work function metal having a first material, and the second gate structure includes a second work function metal having a second material, the first material being different from the second material, wherein the first gate structure further includes a gate dielectric layer, a self-protective layer having metal phosphate, and the first work function metal on the self-protective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.