Semiconductor structure with conductive structure
US10490468B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2018 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Mar 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive pad formed over the substrate. The semiconductor device structure also includes a protection layer formed over the conductive pad, and the protection layer has a trench. The semiconductor device structure further includes a conductive structure accessibly arranged through the trench of the protection layer and electrically connected to the conductive pad. The conductive structure has a curved top surface that defines an apex, and an apex of the curved top surface is higher than a top surface of the protection layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.