Patent · US Active

Advanced structure for info wafer warpage reduction

US10490521B2 · kind B2 · utility

38Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 26, 2014
Grant dateNov 26, 2019
Priority date
Expiry dateFeb 15, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3511
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A package (e.g., a wafer level package (WLP)) including one or more redistribution layers to fan out the contact pads of the one or more dies within an integrated circuit structure. An example package includes a die having a contact pad exposed at a frontside thereof. The package also includes a redistribution layer disposed over the frontside of the die. The redistribution layer includes metallization extending through a nano-composite material, which may be formed from a dielectric material with a nano-filler material disposed therein. The metallization is electrically coupled to the contact pad of the die. By incorporating the nano-composite material in the redistribution layer, the coefficient of thermal expansion (CTE) of the redistribution layer more closely matches the CTE of the die, which prevents or eliminates undesirable warpage of the redistribution layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.