Semiconductor substrate made of silicon carbide and method for manufacturing same
US10490635B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 12, 2017 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Jan 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor substrate having a silicon carbide substrate and an epitaxial film, a concentration ratio between a hydrogen concentration in the silicon carbide substrate and a hydrogen concentration in the epitaxial film is in a range between 0.2 and 5, preferably in a range between 0.5 and 2. Thus, hydrogen diffusion at a boundary position between the epitaxial film and the SiC substrate is restricted. Further, it is possible to prepare the semiconductor substrate for restricting the reduction of the hydrogen concentration. Thus, it is possible to improve the properties of the SiC semiconductor device using the semiconductor substrate, for example, the bipolar device such as a PN diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.