Naohiro Sugiyama
15Patents
7h-index
26Co-inventors
66Inventor score
Filing activity: Aug 6, 1996 → Jan 12, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5944890A | Method of producing single crystals and a seed crystal used in the method | Chemistry; Metallurgy | 43 | Expired |
| US6214108A | Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same | Chemistry; Metallurgy | 34 | Expired |
| US5964944A | Method of producing silicon carbide single crystal | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6451112B1 | Method and apparatus for fabricating high quality single crystal | Emerging Cross-Sectional Technologies | 25 | Expired |
| US5895526A | Process for growing single crystal | Chemistry; Metallurgy | 24 | Expired |
| US6786969B2 | Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7135074B2 | Method for manufacturing silicon carbide single crystal from dislocation control seed crystal | Emerging Cross-Sectional Technologies | 11 | Expired |
| US8194392B2 | Ceramic material and electronic device | Chemistry; Metallurgy | 6 | Active |
| US8604540B2 | Semiconductor device and method of manufacturing the same | Electricity | 4 | Active |
| US9450068B2 | Method for manufacturing silicon carbide semiconductor device | Electricity | 2 | Active |
| US7217323B2 | Equipment and method for manufacturing silicon carbide single crystal | Emerging Cross-Sectional Technologies | 1 | Expired |
| US10490635B2 | Semiconductor substrate made of silicon carbide and method for manufacturing same | Electricity | 0 | Active |
| US8373209B2 | Semiconductor device having D mode JFET and E mode JFET and method for manufacturing the same | Electricity | 0 | Active |
| US8575648B2 | Silicon carbide semiconductor device and method of manufacturing the same | Electricity | 0 | Active |
| US9412831B2 | Manufacturing method for silicon carbide semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.