Vertical and planar RRAM with tip electrodes and methods for producing the same
US10490745B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2018 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Mar 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
Abstract
Methods of forming planar RRAM and vertical RRAM with tip electrodes and the resulting devices are provided. Embodiments include forming a first metal oxide layer on a first dielectric layer; forming and patterning a mask layer over the first metal oxide layer; etching the first metal oxide through the mask layer to form openings for a first and second metal electrodes; removing the mask layer; forming the first and second metal electrodes in the openings; and forming a second metal oxide layer over the first and second metal electrodes, wherein the first and second metal electrodes are v-shaped in top view with tips of the first and second metal electrodes facing each other and a portion of the second metal oxide layer being formed between the tips of the first and second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.