Inventor · Singapore, SG

Wanbing Yi

74Patents
7h-index
71Co-inventors
71Inventor score

Filing activity: May 30, 2013 → Jun 9, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US9875971B2 Magnetic shielding of MRAM package Electricity 190 Active
US9865649B2 Integrated two-terminal device and logic device with compact interconnects having shallow via for embedded application Electricity 24 Active
US10290679B1 High-Density STT-MRAM with 3D arrays of MTJs in multiple levels of interconnects and method for producing the same Electricity 18 Active
US10580968B1 Integrated circuit with memory cells having reliable interconnection Electricity 15 Active
US10199572B2 Integrated magnetic random access memory with logic device Electricity 11 Active
US9728474B1 Semiconductor chips with seal rings and electronic test structures, semiconductor wafers including the semiconductor chips, and methods for fabricating the same Electricity 9 Active
US9397139B1 Integrated inductor and magnetic random access memory device Electricity 8 Active
US10096768B2 Magnetic shielding for MTJ device or bit Electricity 7 Active
US9972775B2 Integrated magnetic random access memory with logic device having low-k interconnects Electricity 6 Active
US9349772B2 Methods for fabricatingintegrated circuits with spin torque transfer magnetic randomaccess memory (STT-MRAM) including a passivation layer formed along lateral sidewalls of a magnetic tunnel junction of the STT-MRAM Electricity 6 Active
US10347826B1 STT-MRAM flip-chip magnetic shielding and method for producing the same Electricity 6 Active
US10062733B1 Integrated circuits with magnetic tunnel junction memory cells and methods for producing the same Electricity 5 Active
US9905282B1 Top electrode dome formation Electricity 5 Active
US9553129B2 Magnetic tunnel junction stack alignment scheme Electricity 4 Active
US9520371B2 Planar passivation for pads Electricity 4 Active
US10446607B2 Integrated two-terminal device with logic device for embedded application Electricity 4 Active
US10490745B2 Vertical and planar RRAM with tip electrodes and methods for producing the same Electricity 4 Active
US10461247B2 Integrated magnetic random access memory with logic device having low-K interconnects Electricity 4 Active
US10483461B2 Embedded MRAM in interconnects and method for producing the same Electricity 3 Active
US9917027B2 Integrated circuits with aluminum via structures and methods for fabricating the same Electricity 3 Active
US9111941B2 Non-volatile memory device with TSI/TSV application Electricity 3 Active
US9786839B2 3D MRAM with through silicon vias or through silicon trenches magnetic shielding Electricity 3 Active
US10361162B1 Magnetic shielding of STT-MRAM in multichip packaging and method of manufacturing the same Electricity 3 Active
US10693054B2 MTJ bottom metal via in a memory cell and method for producing the same Electricity 2 Active
US9490423B2 Integrated circuit structures with spin torque transfer magnetic random access memory ultilizing aluminum metallization layers and methods for fabricating the same Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.