Method for producing silicon single crystals
US10494734B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2016 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Jul 6, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing a plurality of silicon single crystals using a single quartz crucible by repeating a step of heating a silicon material charged in the quartz crucible within a chamber and a step of pulling a silicon single crystal from the silicon melt in the quartz crucible includes a first melting step of melting the silicon material fed to the quartz crucible used to pull a first silicon single crystal, and a second melting step of melting an additional amount of the silicon material fed to the quartz crucible used to pull the second and subsequent silicon single crystals. The interior of the chamber is set to be a first furnace pressure during the first melting step and then set to be a second furnace pressure higher than the first furnace pressure during the second melting step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.