High performance ISFET with ferroelectric material
US10495603B1 · kind B1 · utility
2Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2018 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | May 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/033
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to high performance ion sensitive field effect transistor (ISFET) with ferroelectric material and methods of manufacture. The structure includes: a substrate comprising a doped region; a gate dielectric material over the doped region; a ferroelectric material over the gate dielectric material; and a sensing membrane over the ferroelectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.