Lanxiang Wang
29Patents
3h-index
30Co-inventors
55Inventor score
Filing activity: Jan 6, 2015 → Jun 2, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9331200B1 | Semiconductor device and method for fabricating the same | Electricity | 376 | Active |
| US9859290B1 | Memory device and method for fabricating the same | Electricity | 9 | Active |
| US9911847B1 | Non-volatile memory device and manufacturing method thereof | Electricity | 7 | Active |
| US10495603B1 | High performance ISFET with ferroelectric material | Electricity | 2 | Active |
| US11374135B2 | Sensor and method of forming the same | Electricity | 1 | Active |
| US10950661B2 | Integrated circuits with resistive non-volatile memory cells and methods for producing the same | Electricity | 1 | Active |
| US11158643B2 | Non-volatile memory bit cells with non-rectangular floating gates | Electricity | 0 | Active |
| US12211887B2 | Semiconductor devices having a resistor structure with more refined coupling effect for improved linearity of resistance | Electricity | 0 | Active |
| US11327045B2 | Sensor device for detecting a pH change in a solution and a method for forming the sensor device | Electricity | 0 | Active |
| US10700277B1 | Memory device and a method for forming the memory device | Electricity | 0 | Active |
| US11823889B2 | Sensor and method of forming the same | Electricity | 0 | Active |
| US11450677B2 | Partially silicided nonvolatile memory devices and integration schemes | Electricity | 0 | Active |
| US11313827B2 | Sensor devices for detecting a pH change in a solution | Electricity | 0 | Active |
| US11495608B2 | Multi-finger gate nonvolatile memory cell | Electricity | 0 | Active |
| US10890554B1 | Sensors with a non-planar sensing structure | Electricity | 0 | Active |
| US11774402B2 | Sensor devices | Electricity | 0 | Active |
| US10903272B2 | Memory device and a method for forming the memory device | Electricity | 0 | Active |
| US12139185B2 | Full-day train operation diagram generation method based on time division scheme and activity-event relationship | Physics | 0 | Active |
| US11515314B2 | One transistor two capacitors nonvolatile memory cell | Electricity | 0 | Active |
| US11641739B2 | Semiconductor non-volatile memory devices | Electricity | 0 | Active |
| US11380703B2 | Memory structures and methods of forming memory structures | Electricity | 0 | Active |
| US11600664B2 | Memory devices and methods of forming memory devices | Electricity | 0 | Active |
| US10859625B2 | Wafer probe card integrated with a light source facing a device under test side and method of manufacturing | Physics | 0 | Active |
| US11205478B2 | Memory device and a method for forming the memory device | Physics | 0 | Active |
| US9847351B2 | Semiconductor device and method for fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.