Patent · US Active

Device and method for two dimensional active carrier profiling of semiconductor components

US10495666B2 · kind B2 · utility

0Cited by

3References

12Claims

0Family size

Assignee

IMEC VZW · BE

Inventors

Kristof Paredis · Oud-Heverlee, BE
Umberto Celano · Kessel-Lo, BE
Wilfried Vandervorst · Mechelen, BE
Oberon Dixon-Luinenburg · Heverlee, BE

Key dates

Filing date	Jul 3, 2018
Grant date	Dec 3, 2019
Priority date	—
Expiry date	Jul 3, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/14
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method of measuring an electrical characteristic of a current path is disclosed. In one aspect, the method includes a probe for scanning spreading resistance microscopy (SSRM), a test sample contacted by the probe, a back contact on the test sample, a bias voltage source and a logarithmic SSRM amplifier, when a modulation at a predefined frequency is applied to either the contact force of the probe or to the bias voltage, the device comprising electronic circuitry for producing in real time a signal representative of the electrical characteristic, according to the formula lognA=±VSSRM±logn(dV)+Vmultiplier.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.