Nonvolatile memory device including ferroelectric memory element and resistive memory element, and method of operating nonvolatile memory device
US10497433B2 · kind B2 · utility
3Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | Jun 23, 2018 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Jun 23, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device according to one embodiment includes a ferroelectric memory element and a resistive memory element. The ferroelectric memory element includes a field effect transistor having a ferroelectric gate dielectric layer. The resistive memory element includes a resistance change memory layer disposed between a first memory electrode and a second memory electrode. A drain electrode of the field effect transistor is connected to the first memory electrode or second memory electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.