Patent · US Active

Memory device

US10497453B2 · kind B2 · utility

3Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 11, 2018
Grant dateDec 3, 2019
Priority date
Expiry dateOct 11, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2211/5644
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory device includes a page buffer unit including a plurality of latches latching each of a plurality of pieces of dummy data of selected memory cells according to a plurality of dummy signals provided by a word line of the selected memory cells, and a control logic comparing a count value of a first count latch among the plurality of latches with a reference count value, determining whether to count a second count latch other than the first count latch according to a result of the comparison, and correcting a level of a read signal provided by the word line of the selected memory cells in a read operation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.