Nano-imprinting using high-pressure crystal phase transformations
US10497564B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2019 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Feb 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02587
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus for nano-imprinting using a high-pressure crystal phase transformation, includes: a stamp configured to perform nano-imprinting, the stamp comprising a pedestal and a base, wherein the pedestal is shaped to match an intended shape of a device to be fabricated; a tool chuck physically connected to the stamp, the tool chuck configured to allow a user to apply one or more of pressure and temperature to the film; a substrate upon which the device can be fabricated; a thin film physically connected to the substrate; and a tool stage physically connected to the substrate, the tool stage configured to allow a user to apply one or more of pressure and temperature to the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.