Benjamin Poust
5Patents
2h-index
10Co-inventors
40Inventor score
Filing activity: Mar 20, 2012 → Feb 26, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9484284B1 | Microfluidic impingement jet cooled embedded diamond GaN HEMT | Electricity | 16 | Active |
| US8575657B2 | Direct growth of diamond in backside vias for GaN HEMT devices | Electricity | 13 | Active |
| US9774067B2 | Low power threshold integrated micro-plasma limiter | Electricity | 1 | Active |
| US10340570B2 | Microelectronic RF substrate with an integral isolator/circulator | Electricity | 0 | Active |
| US10497564B1 | Nano-imprinting using high-pressure crystal phase transformations | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.