Fin field-effect transistor device and method
US10497577B2 · kind B2 · utility
2Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2017 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Nov 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a semiconductor capping layer over a first fin in a first region of a substrate, forming a dielectric layer over the semiconductor capping layer, and forming an insulation material over the dielectric layer, an upper surface of the insulation material extending further away from the substrate than an upper surface of the first fin. The method further includes recessing the insulation material to expose a top portion of the first fin, and forming a gate structure over the top portion of the first fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.